“Microelectronics: The Beginning of the End, or the End of the Beginning?”
Dr. Sanjay Banerjee
Director, Microelectronics Research Center, University of Texas at Austin
Wednesday, July 11, 2007
5:45 p.m. – Networking Reception
6:30 p.m. – Presentation
Naysayers have been claiming for some time now that the dramatic progress of microelectronics in accordance with Moore’s law over the last several decades is about to come to a crashing halt in a decade or so due to fundamental CMOS device scaling limits. We will give examples from novel semiconductor memory and logic devices that indicate that the future is likely to be even more exciting, with the morphing of microelectronics into nanoelectronics. We will give some examples of work being pursued in spintronics, phasetronics and novel charge based-devices under the auspices of the South West Academy for Nanoelectronics. We will also touch upon work being done in nanophotonics, organic sensors and MEMS technology.
Dr. Banerjee is the Cockrell Family Regents Chair Professor of Electrical and Computer Engineering and Director, Microelectronics Research Center, at the University of Texas at Austin. He has over 600 archival refereed publications/talks, 7 books/chapters, and 26 U.S. patents. He has supervised over 50 Ph.D. and 60 MS students.
Banerjee received the Engineering Foundation Advisory Council Halliburton Award, 1991, the Texas Atomic Energy Fellowship (1990-1997), Cullen Professorship (1997-2001) and the NSF Presidential Young Investigator Award in 1988. His recent awards include Fellow, APS (2006), Distinguished Alumnus Award, IIT (2005), Industrial R&D 100 Award (with Singh in 2004), ECS Callinan Award, 2003, IEEE Millennium Medal, 2000 and SRC Inventor Recognition Award, 2000.
In addition, Banerjee is a Fellow of IEEE, and was a Distinguished Lecturer for IEEE Electron Devices Society, and the General Chair of the IEEE Device Research Conference, 2002. He is currently active in the areas of ultra high vacuum and remote plasma-enhanced chemical vapor deposition for silicon-germanium-carbon heterostructure MOSFETs and nanostructures. He is also interested in the areas of ultra-shallow junction technology and semiconductor device modeling.